|
|
|
National Stock Number:
5961-00-848-1906
Federal Supply Class:
5961
National Item Identification Number:
008481906
Description:
TRANSISTOR
Detail:
An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
|
Manufacturer Information:
| 2N3307 | 02929 | NEWARK ELECTRONICS CORPORATION | | 2N3307 | 04713 | FREESCALE SEMICONDUCTOR, INC. | | 2N3307 | 31338 | SEMITRONICS CORP | | 2N3307 | 50891 | SEMICONDUCTOR TECHNOLOGY, INC. | | 2N3307 | 5V1P1 | ON SEMICONDUCTOR CORPORATION | | 2N3307 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION | | 4014584-0701 | 06845 | RAYTHEON COMPANY | | G390091S12 | 24930 | L3HARRIS TECHNOLOGIES, INC | | JAN2N3307 | 81349 | MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M | | JAN2N3307 | 81350 | JOINT ARMY-NAVY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M | | 928454-1 | 82577 | RAYTHEON COMPANY | | 2N3307 | C7191 | ADELCO ELEKTRONIK GMBH | | 2N3307A | C7191 | ADELCO ELEKTRONIK GMBH | | 2N3307 | D6528 | LACON ELECTRONIC GMBH | | SS1226H1 | 04713 | FREESCALE SEMICONDUCTOR, INC. | | V00705-001 | 12436 | BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC. | | RELEASE4694 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
|
Techincal Specification:
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR | | CURRENT RATING PER CHARACTERISTIC | 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC | | FEATURES PROVIDED | HERMETICALLY SEALED CASE | | INTERNAL CONFIGURATION | JUNCTION CONTACT | | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 CELSIUS JUNCTION | | MOUNTING METHOD | TERMINAL | | OVERALL DIAMETER | 0.230 INCHES MAXIMUM | | OVERALL LENGTH | 0.346 INCHES MAXIMUM | | POWER RATING PER CHARACTERISTIC | 200.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION | | SEMICONDUCTOR MATERIAL | SILICON | | SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNP | | SPECIFICATION/STANDARD DATA | 80131-RELEASE4694 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION | | TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL | | TERMINAL LENGTH | 0.500 INCHES MINIMUM | | TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD | | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 35.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 3.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
|
|