| COMPONENT NAME AND QUANTITY | 16 SEMICONDUCTOR DEVICE DIODE |
| CURRENT RATING PER CHARACTERISTIC | 350.00 MILLIAMPERES SOURCE CUTOFF CURRENT PRESET ALL SEMICONDUCTOR DEVICE DIODE |
| FEATURES PROVIDED | BURN IN AND HERMETICALLY SEALED CASE |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-116 |
| INCLOSURE MATERIAL | METAL |
| POWER RATING PER CHARACTERISTIC | 650.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE ALL SEMICONDUCTOR DEVICE DIODE |
| PROPRIETARY CHARACTERISTICS | PACS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION |
| MOUNTING METHOD | TERMINAL |
| OVERALL HEIGHT | 0.180 INCHES NOMINAL |
| OVERALL LENGTH | 0.785 INCHES MAXIMUM |
| OVERALL WIDTH | 0.325 INCHES MAXIMUM |
| SPECIAL FEATURES | ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN |
| SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR DEVICE DIODE |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 50.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE ALL SEMICONDUCTOR DEVICE DIODE |
| TERMINAL LENGTH | 0.100 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 14 PRINTED CIRCUIT |